Volume 33 | Issue 6

IEEE Design & Test offers original works describing the methods used to design and test electronic product hardware and supportive software.

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Editor

Jörg Henkel
Professor and Chair for Embedded Systems
Karlsruhe Institute of Technology, Germany
henkel@kit.edu

Articles

Editor's note: To reduce the manufacturing cost of heterogeneous 3-D integration, the Integrated Fan-Out Wafer-Level Chip-Scale Packaging (InFO WLCSP) is one of the emerging packaging technologies. In this article, the authors propose a cost model for InFO WLCSP, which can be used for analyzing the total test cost with respect to the test configuration and for optimizing the test... Read more on IEEE Xplore

Editor's note: Process variations, aging and wearout, are nonidealities that lead to suboptimal system performance and increased power. In order to understand the effects of these degradation effects, until now, researchers have investigated them thoroughly, but separately from each other. What this article shows is that process variations and wearout are not independent from each other and... Read more on IEEE Xplore

Reliability continues to be a severe challenge in the development of emerging memories. In this article, the authors offer a comprehensive survey of reliability enhancement techniques for three mainstream emerging memories and a summary of the possible future research directions in this area.

One promising application of emerging memories is to implement a nonvolatile memory hierarchy that can retain the data when power is removed. In this work, the authors present some design techniques of nonvolatile processors with a multisource energy-harvesting system that combines thermal, kinetic, and indoor photovoltaic sources to provide a stable power supply.

Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO<sub>2</sub>-based RRAM devices and suggest a way to improve the device's data retention time.