Acronym
VLSI-TSA 2016

2016 International Symposium on VLSI Technology, Systems and Application

Date
Geographic Location
Hsinchu, Taiwan

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Description

•Low power CMOS and embedded memory •Foundry technology •RF process, device and integration technology •Standalone memory: DRAM, FLASH, emerging memory technology •Advanced CMOS modules: e.g. gate stack, contact, doping, strained channel, non-Si integration, interconnect technology, etc. •Lithography: directed self-assembly, EUV, multiple patterning, etc. •Power and analog IC device and technology •Advanced CMOS process and devices: Ge, SiGe, III-V, GAA, 2D/1D •Process and device modeling •TFT and organic electronics •MEMS, imagers and sensors •Advanced manufacturing technology, yield, reliability and test •3D ICs and advanced packaging •Photonics •Energy harvesting technology •loT enabling technologies